Location:
Lenzburg, Aargau, SwitzerlandJob ID:
R0100713Date Posted:
2025-07-21Company Name:
HITACHI ENERGY LTDProfession (Job Category):
OtherJob Schedule:
Full timeRemote:
NoJob Description:
The opportunity
Join our SiC power-device team as an R&D intern and contribute to the future of power electronics. You’ll support chip design and simulation while gaining hands-on experience across the full development cycle of SiC MOSFETs. Collaborate closely with experienced engineers and process specialists in a dynamic, inclusive environment. This is your chance to grow your TCAD skills and deepen your semiconductor knowledge in a real-world setting.
How you’ll make an impact
Assist in the conceptual design and TCAD simulation of SiC power devices
Work with our experienced engineers to refine device structures and optimize performance
Predict electrical characteristics and validate simulation results
Analyze data, document findings, and present insights in team meetings
Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements
Your background
Master’s degree in Electrical Engineering, Physics, or Materials Science
Experience with TCAD tools, ideally in SiC device simulation
Understanding of SiC device physics
Basic knowledge of semiconductor fabrication processes
Strong analytical and data interpretation skills
Fluent in English with excellent communication skills
More about us
We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally – empowering you to thrive while balancing life and work.
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