RF Technology Development Engineer – Principal Engineer

About GlobalFoundries

GlobalFoundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.

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Summary of Role:

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for an device and integration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT

Essential Responsibilities include:

• Responsible for development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirements
• Design, electrical characterization and analysis of RF devices including FET, bipolar, diodes and passives.
• Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
• Responsible for the DC and RF characterization and analysis including s-parameter, noise figure and loadpull
• DOE design, execution, and analysis of results.
• Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield
• Own and drive technical process problem solving.
• Interact with internal & external customers and respond to technical queries.
• Establish new technology design rules, test structures and test methodologies.
• Innovate new methods of continuous process/device improvement.

Other Responsibilities:

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

• Education – Graduating with Master’s or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline from an accredited degree program.
• Background in CMOS device physics, semiconductor processing, and characterization
• Strong data analysis skills
• Excellent interpersonal skills, both oral and written
• Must have at least an overall 3.0 GPA and proven good academic standing.
• Language Fluency - English (Written & Verbal)

Preferred Qualifications:

• Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
• Experience in RF device design and characterization including high frequency design, measurement and analysis
• Experience with Cadence or any other layout and simulation tool
• Prior related internship or co-op experience.
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
• Strong written and verbal communication skills
• Strong planning & organizational skills

Expected Salary Range

$85,000.00 - $146,000.00

The exact Salary will be determined based on qualifications, experience and location.