RF Technology Development Device Engineer - MTS

About GlobalFoundries:

GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.

Summary of Role:

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for a device and TCAD engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT.

Essential Responsibilities      

• You will be responsible for TCAD simulation, design, electrical characterization and analysis of SiGe HBTs and RF CMOS devices
• Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
• Work closely with process integration team for device fabrication work.
• Establish new technology design rules, test structures and test methodologies
• You will be responsible for the DC and RF characterization and analysis including high power measurements, s-parameter and loadpull
• Own and drive technical process problem solving.
• Data analysis
• Team player
• Interact with internal & external customers and respond to technical queries.
• Innovate new methods of continuous process/device improvement.
• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements

Other Responsibilities:

· Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

• Education: Master’s Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years
• Years of Experience: 3+ years in semiconductor device analysis and TCAD
• Experience in Silicon CMOS or SiGe BiCMOS TCAD and device analysis
• RF device design and characterization experience
• Experience with Cadence or any other layout and simulation tool
• Strong data analysis skills
• Fluency in English Language – written & verbal
• Ability to relocate to Essex Junction, VT

Preferred Qualifications:

• 5+ Years of Experience in Silicon or SiGe BiCMOS TCAD and device analysis
• Experience of leading a device or process development project
• Experience in RF device design and characterization including high frequency design, measurement and analysis
• Experience in noise figure and loadpull measurement and analysis
• Excellent interpersonal skills, energetic, motivated, and self-driven
• Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
• Outstanding communication skills - both written and verbal
• Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies
• Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs
• Demonstrated ability to meet deadlines and commitments

Expected Salary Range

$98,000.00 - $176,000.00

The exact Salary will be determined based on qualifications, experience and location.