The Staff Engineer will play a key role in the Device and Product Group, supporting the development and introduction of state-of-the-art GaN semiconductor devices. This position requires deep expertise in discrete power electronic device design, advanced TCAD simulation, and layout. The role is highly cross-functional, involving collaboration with R&D, design, epitaxy, fabrication, assembly, test, and reliability teams.
Key Responsibilities
- Device Design: Work with marketing and NPI teams to design and optimize high-voltage GaN discrete power devices to meet customer specifications considering process integration, manufacturability, assembly and cost targets.
- Layout: Layout of GaN discrete power electronic devices using Cadence Virtuoso or other similar layout tools.
- TCAD Simulation: Perform advanced TCAD simulations (e.g., using Sentaurus or similar tools) to guide device design, simulate internal electric field profiles and intrinsic device characteristics, extract chip-level parasitic resistance, inductance and capacitance, and simulate package level thermal and electrical parameters using multi-physics simulations.
- Cross-Functional Collaboration: Work closely with marketing, engineering, applications, and manufacturing teams to develop new product designs.
- Continuous Improvement: Facilitate process improvements and fixes for reliability or yield issues and contribute to compact model development for PDK integration.